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SIPMOS(R) Small-Signal Transistor
BSS 149
q q q q q q q
VDS 200 V ID 0.35 A RDS(on) 3.5
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
1
2
3
Type
Ordering Code
Tape and Reel Information E6325: 2000 pcs/carton; Ammopack
Pin Configuration Marking Package 1 G 2 D 3 S SS149 TO-92
BSS 149 Q67000-S252
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 34 C Pulsed drain current, Max. power dissipation, Symbol Values 200 200 14 20 0.35 1.05 1.0 - 55 ... + 150 125 E 55/150/56 W C K/W - A Unit V
VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA
- -
TA = 25 C TA = 25 C
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
04.97
BSS 149
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = - 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 200 V, VGS = - 3 V Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.05 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 0.35 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VDD = 30 V, VGS = - 2 V ... + 5 V, RGS = 50 , ID = 0.29 A Turn-off time toff, (toff = td(off) + tf) VDD = 30 V, VGS = - 2 V ... + 5 V, RGS = 50 , ID = 0.29 A Values typ. max. Unit
V(BR)DSS
200 - - 1.2 - - 0.7
V
VGS(th) IDSS
- 1.8
A - - - - 10 2.5 0.2 200 nA - 100 - 3.5
IGSS RDS(on)
gfs
0.4 0.6 500 40 12 7 20 60 50 -
S pF - 670 60 20 10 30 80 65 ns
Ciss Coss
-
Crss
-
td(on) tr td(off) tf
- - - -
Semiconductor Group
2
BSS 149
Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current TA = 25 C Diode forward on-voltage IF = 0.7 A, VGS = 0 Symbol min. Values typ. max. A - - - 0.8 Unit V V V V V V V V 0.35 1.05 V - Symbol Limit Values min. Range of VGS(th) Threshold voltage selected in groups P R S T U V W
1):
Unit
IS ISM
-
VSD
1.2
VGS(th) Grouping
Test Condition -
max. 0.15 - 0.80 - 0.93 - 1.06 - 1.19 - 1.32 - 1.45 - 1.58
VGS(th) VGS(th)
- - 0.95 - 1.08 - 1.21 - 1.34 - 1.47 - 1.60 - 1.73
VDS1 = 0.2 V VDS2 = 3 V; ID = 1 mA
1) A specific group cannot be ordered seperately. Each reel only contains transistors from one group.
Semiconductor Group
3
BSS 149
Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C
Typ. output characteristics ID = f (VDS) parameter: tp = 80 s
Typ. drain-source on-resistance RDS(on) = f (ID) parameter: VGS
Semiconductor Group
4
BSS 149
Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS 2 x ID x RDS(on)max.
Typ. forward transconductance gfs = f (ID) parameter: VDS 2 x ID x RDS(on)max., tp = 80 s
Drain-source on-resistance RDS(on) = f (Tj) parameter: ID = 0.05 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS) parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5
BSS 149
Gate threshold voltage VGS(th) = f (Tj) parameter: VDS = 3 V, ID = 1 mA, (spread)
Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj, (spread)
Drain current ID = f (TA) parameter: VGS 3 V
Drain-source breakdown voltage V(BR) DSS = b x V(BR)DSS (25 C)
Semiconductor Group
6

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